absolute maximum ratings thermal and mechanical characteristics g d s single die fredfet unit a v mj a unit w c/w c v oz g inlbf nm ratings 51 32 230 30 1580 37 min typ max 480 0.26 0.15 -55 150 2500 1.03 29.2 10 1.1 parameter continuous drain current @ t c = 25c continuous drain current @ t c = 100c pulsed drain current 1 gate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased surface operating and storage junction temperature range rms voltage (50-60hhz sinusoidal waveform from terminals to mounting base for 1 min.) package weight terminals and mounting screws. symbol i d i dm v gs e as i ar symbol p d r jc r cs t j ,t stg v isolation w t torque typical applications zvs phase shifted and other full bridge half bridge pfc and other boost converter buck converter single and two switch forward flyback features fast switching with low emi low t rr for high reliability ultra low c rss for improved noise immunity low gate charge avalanche energy rated rohs compliant APT51F50J 500v, 51a, 0.075 max, t rr 310ns APT51F50J s o t -2 2 7 is oto p ? file # e145592 "ul recognized" g s s d n-channel fredfet power mos 8 ? is a high speed, high voltage n-channel switch-mode power mosfet. this 'fredfet' version has a drain-source (body) diode that has been optimized for high reliability in zvs phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. low gate charge, high gain, and a greatly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and reliable paralleling, even when switching at very high frequency. microsemi website - http://www.microsemi.com 050-8127 rev d 9-2011 downloaded from: http:///
static characteristics t j = 25c unless otherwise speci ? ed dynamic characteristics t j = 25c unless otherwise speci ? ed source-drain diode characteristics 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 starting at t j = 25c, l = 2.31mh, r g = 25 , i as = 37a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ? ned as a ? xed capacitance with the same stored energy as c oss with v ds = 67% of v (br)dss . to calculate c o(er) for any value of v ds less than v (br)dss, use this equation: c o(er) = -1.65e-7/v ds ^2 + 5.51e-8/v ds + 2.03e-10. 6 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci ? cations and information contained herein. g d s unit v v/c v mv/c a na unit s pf nc ns unit a v ns c a v/ns min typ max 500 0.60 0.064 0.075 2.5 4 5 -10 250 1000 100 min typ max 55 11600 160 1250 725 365 290 65 130 45 55 120 39 min typ max 51 230 1.0 310 570 1.48 3.85 11.3 16.6 20 test conditions v gs = 0v , i d = 250 a reference to 25c, i d = 250 a v gs = 10v , i d = 37a v gs = v ds , i d = 2.5ma v ds = 500v t j = 25c v gs = 0v t j = 125c v gs = 30v test conditions v ds = 50v , i d = 37a v gs = 0v , v ds = 25v f = 1mhz v gs = 0v , v ds = 0v to 333v v gs = 0 to 10v , i d = 37a, v ds = 250v resistive switching v dd = 333v , i d = 37a r g = 2.2 6 , v gg = 15v test conditions mosfet symbol showing the integral reverse p-n junction diode (body diode) i sd = 37a , t j = 25c, v gs = 0v t j = 25c t j = 125c i sd = 37a 3 t j = 25c v dd = 100v t j = 125c di sd / dt = 100a/ s t j = 25c t j = 125c i sd 37a, di/dt 1000a/ s, v dd = 333v, t j = 125c parameter drain-source breakdown voltage breakdown voltage temperature coef ? cient drain-source on resistance 3 gate-source threshold voltage threshold voltage temperature coef ? cient zero gate voltage drain current gate-source leakage current parameter forward transconductance input capacitance reverse transfer capacitance output capacitance effective output capacitance, charge related effective output capacitance, energy related total gate charge gate-source charge gate-drain charge turn-on delay time current rise time turn-off delay time current fall time parametercontinuous source current (body diode) pulsed source current (body diode) 1 diode forward voltage reverse recovery time reverse recovery charge reverse recovery current peak recovery dv/dt symbol v br(dss) ? v br(dss) / ? t j r ds(on) v gs(th) ? v gs(th) / ? t j i dss i gss symbol g fs c iss c rss c oss c o(cr) 4 c o(er) 5 q g q gs q gd t d(on) t r t d(off) t f symbol i s i sm v sd t rr q rr i rrm dv/dt 050-8127 rev d 9-2011 APT51F50J downloaded from: http:///
v gs = 7 & 10v 5.5v t j = 125c t j = 25c t j = -55c v gs = 10v 6v 5v v ds > i d(on) x r ds(on) max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 37a t j = 125c t j = 25c t j = -55c c oss c iss i d = 37a v ds = 400v v ds = 100v v ds = 250v t j = 125c t j = 25c t j = -55c t j = 150c t j = 25c t j = 125c t j = 150c c rss 6.5v v gs , gate-to-source voltage (v) g fs , transconductance r ds(on) , drain-to-source on resistance i d , drain current (a) i sd, reverse drain current (a) c, capacitance (pf) i d , drain current (a) i d , drian current (a) v ds(on) , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 1, output characteristics figure 2, output characteristics t j , junction temperature (c) v gs , gate-to-source voltage (v) figure 3, r ds(on) vs junction temperature figure 4, transfer characteristics i d , drain current (a) v ds , drain-to-source voltage (v) figure 5, gain vs drain current figure 6, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (v) figure 7, gate charge vs gate-to-source voltage figure 8, reverse drain current vs source-to-drain voltage 0 5 10 15 20 25 0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5 300250 200 150 100 50 0 2.52.0 1.5 1.0 0.5 0 100 8060 40 20 0 1614 12 10 86 4 2 0 140120 100 8060 40 20 0 250200 150 100 50 0 20,00010,000 1000 100 10 200180 160 140 120 100 8060 40 20 0 APT51F50J 050-8127 rev d 9-2011 downloaded from: http:///
sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m 4 (4 places ) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drai n gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source emitter terminals are shorte d internally. current handlin g capability is equal for eithersource terminal . 1ms 100ms r ds(on) dc line 100 s i dm 10ms 13 s 100 s i dm 100ms 10ms 13 s r ds(on) dc line 1ms 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration t j = 150c t c = 25c i d , drain current (a) v ds , drain-to-source voltage (v) v ds , drain-to-source voltage (v) figure 9, forward safe operating area figure 10, maximum forward safe operating area z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 11. maximum effective transient thermal impedance junction-to-case vs pulse duration i d , drain current (a) 1 10 100 800 1 10 100 800 0.300.25 0.20 0.15 0.10 0.05 0 300100 10 1 0.1 300100 10 1 0.1 APT51F50J t j = 125c t c = 75c 050-8127 rev d 9-2011 downloaded from: http:///
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